二自由度耦合非线性随机系统的最大Lyapunov指数和稳定性

利用摄动方法讨论了一类耦合二自由度非线性系统，在小强度白噪声参数激励下系统运动模态的稳定性，获得了系统扩散过程的稳态概率密度的渐近表达式，由此获得了系统运动模态几乎必然稳定的充分必要条件。     

油润滑条件下ZA27／SiCp复合材料的滑动磨损行为

高能超声凝固法制备ＺＡ２７／ＳｉＣｐ复合材料，用环－块摩擦磨损试验机研究了油润滑下复合材料的滑动摩擦磨损性能，发现未增强的基体合金在重载时产生严重粘着磨损，磨损层发生软化和塑性流动，而复合性能中的ＳｉＣ颗粒暴露于磨损表面并起承载作用，从而保护基体不发生严重磨损。与基体合金相比，复合材料的摩擦系数平稳而较低，且耐磨性提高１０倍以上。     

Fracture process zone analysis of concrete using moiré interferometry

The fracture process zone (FPZ) ahead of a crack tip in concrete and mortar beams subjected to threepoint bending was studied using moiré interferometry. A large FPZ can occur in concrete before the external load reaches its maximum value. Comparing the experimental results between concrete and mortar suggests that the aggregate contributes to the formation of the large FPZ in concrete. The formation of this large FPZ makes concrete less brittle than mortar. The effect of the FPZ on the fracture property, such as stress intensity factor, is investigated by combining moiré interferometry measured displacements with the smoothing FEM method. The study shows that a large FPZ significantly affects the value of the stress intensity factor.     

Six‐wave mixing induced by free‐carrier plasma in silicon nanowire waveguides

Nonlinear wave mixing in mesoscopic silicon structures is a fundamental nonlinear process with broad impact and applications. Silicon nanowire waveguides, in particular, have large third‐order Kerr nonlinearity, enabling salient and abundant four‐wave‐mixing dynamics and functionalities. Besides the Kerr effect, in silicon waveguides two‐photon absorption generates high free‐carrier densities, with corresponding fifth‐order nonlinearity in the forms of free‐carrier dispersion and free‐carrier absorption. However, whether these fifth‐order free‐carrier nonlinear effects can lead to six‐wave‐mixing dynamics still remains an open question until now. Here we report the demonstration of free‐carrier‐induced six‐wave mixing in silicon nanowires. Unique features, including inverse detuning dependence of six‐wave‐mixing efficiency and its higher sensitivity to pump power, are originally observed and verified by analytical prediction and numerical modeling. Additionally, asymmetric sideband generation is observed for different laser detunings, resulting from the phase‐sensitive interactions between free‐carrier six‐wave‐mixing and Kerr four‐wave‐mixing dynamics. These discoveries provide a new path for nonlinear multi‐wave interactions in nanoscale platforms.

     

Optical heterodyne Herriott-type multipass laser absorption spectrometer

We present a Herriott-type multipass laser absorption spectrometer enhanced by optical heterodyne detection. The proposal is demonstrated by measuring the spectra of water vapor molecule in the region from 12247.6873 to 12249.6954 cm-1. Compared with direct absorption spectroscopy, the signal-to-noise ratio is improved nearly one magnitude of factor by combining with the optical heterodyne spectroscopy and extra weak absorption lines are observed. The minimum detectable absorption is estimated at 4.36×10-8 cm-1 and the measured line shape dominated by Doppler broadening can be precisely recovered by direct transformation of experimental optical heterodyne spectral profile.     

Progress on accurate measurement of the Planck constant:Watt balance and counting atoms

The Planck constant h is one of the most significant constants in quantum physics.Recently,the precision measurement of the value of h has been a hot issue due to its important role for the establishment of both a new SI and a revised fundamental physical constant system.Up to date,two approaches,the watt balance and counting atoms,have been employed to determine the Planck constant at a level of several parts in 108.In this paper,the principle and progress on precision measurement of the Planck constant using watt balance and counting atoms at national metrology institutes are reviewed.Further improvement in determining the Planck constant and possible developments of a revised physical constant system in future are discussed.     

Ultrafast solvation dynamics at internal sites of staphylococcal nuclease investigated by site-directed mutagenesis

Internal solvation of protein was studied by site-directed mutagenesis,with which an intrinsically fluorescent probe,tryptophan,is inserted into the desired position inside a protein molecule for ultrafast spectroscopic study.Here we review this unique method for protein dynamics research.We first introduce the frontiers of protein solvation,site-directed mutagenesis,protein stability and characteristics,and the spectroscopic methods.Then we present time-resolved spectroscopic dynamics of solvation dynamics inside cavities of active sites.The studies are carried out on a globular protein,staphylococcal nuclease.The solvation at sites inside the protein molecule’s cavities clearly reveals characteristics of the local environment.These solvation behaviors are directly correlated to enzyme activity.     

Efficient error estimation in quantum key distribution

In a quantum key distribution(QKD)system,the error rate needs to be estimated for determining the joint probability distribution between legitimate parties,and for improving the performance of key reconciliation.We propose an efficient error estimation scheme for QKD,which is called parity comparison method(PCM).In the proposed method,the parity of a group of sifted keys is practically analysed to estimate the quantum bit error rate instead of using the traditional key sampling.From the simulation results,the proposed method evidently improves the accuracy and decreases revealed information in most realistic application situations.     

Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN_x matrix by the influence of near-interface oxide traps

Si-rich silicon nitride films are prepared by plasma-enhanced chemical vapor deposition method,followed by thermal annealing to form the Si nanocrystals(Si-NCs)embedded in Si Nx floating gate MOS structures.The capacitance–voltage(C–V),current–voltage(I–V),and admittance–voltage(G–V)measurements are used to investigate the charging characteristics.It is found that the maximum flat band voltage shift(△VFB)due to full charged holes(～6.2 V)is much larger than that due to full charged electrons(～1 V).The charging displacement current peaks of electrons and holes can be also observed by the I–V measurements,respectively.From the G–V measurements we find that the hole injection is influenced by the oxide hole traps which are located near the Si O2/Si-substrate interface.Combining the results of C–V and G–V measurements,we find that the hole charging of the Si-NCs occurs via a two-step tunneling mechanism.The evolution of G–V peak originated from oxide traps exhibits the process of hole injection into these defects and transferring to the Si-NCs.